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Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators

机译:电子与电子之间相互作用的光谱透视   磁掺杂拓扑绝缘子的磁性能

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摘要

We combine low energy muon spin rotation (LE-$\mu$SR) and soft-X-rayangle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic andelectronic properties of magnetically doped topological insulators,(Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction insamples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at doping levels x $\gtrsim$ 0.16.The observed magnetic transition is not sharp in temperature indicating agradual magnetic ordering. We find that the evolution of magnetic ordering isconsistent with formation of ferromagnetic islands which increase in numberand/or volume with decreasing temperature. Resonant ARPES at the V $L_3$ edgereveals a nondispersing impurity band close to the Fermi level as well as Vweight integrated into the host band structure. Calculations within thecoherent potential approximation of the V contribution to the spectral functionconfirm that this impurity band is caused by V in substitutional sites. Theimplications of our results on the observation of the quantum anomalous Halleffect at mK temperatures are discussed.
机译:我们结合低能μ自旋旋转(LE-$ \ mu $ SR)和软X射线分辨光电子能谱(SX-ARPES),研究磁性掺杂拓扑绝缘子(Bi,Sb)$ _ 2的磁和电子性质$ Te $ _3 $。我们发现在掺杂水平x $ \ gtrsim $ 0.16的情况下,在(V / Cr)$ _ x $(Bi,Sb)$ _ {2-x} $ Te $ _3 $的样本中获得了一个完整的磁体积分数。温度变化不明显,表明磁性逐渐排序。我们发现,磁性有序的演化与铁磁性岛的形成是一致的,铁磁性岛的数量和/或体积随着温度的降低而增加。 V $ L_3 $边缘处的共振ARPES揭示了接近费米能级的非分散杂质带以及集成到主体带结构中的Vweight。在V对谱函数的相干势近似范围内的计算证实该杂质带是由取代位点中的V引起的。讨论了我们的结果对在mK温度下观察量子异常Halleffect的意义。

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